| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| IRF624STR | MOS(场效应管) |
IR |
TO-263 |
08+ |
11000 |
|||
| AON7200 | MOS(场效应管) |
AOS/万代 |
DFN3x3 |
19+ |
11000 |
|||
| AOTF298 | MOS(场效应管) |
AOS/万代 |
TO-220F |
14+ |
11000 |
|||
| AP1N45 | MOS(场效应管) |
ANSC/安葳科技 |
SOT-223 |
11+ |
11000 |
|||
| MML60R290PTH | MOS(场效应管) |
MAGNACHIP/美格纳 |
TO-262 |
15+ |
11000 |
|||
| FDC8884 | MOS(场效应管) |
FAIRCHILD/仙童 |
TSOP-6 |
14+ |
11000 |
|||
| FDS7064N | MOS(场效应管) |
FAIRCHILD/仙童 |
SOP-8 |
06+ |
11000 |
|||
| FMV60N125S2HF | MOS(场效应管) |
FUJ/富士 |
TO-220F |
18+ |
11000 |
|||
| BSC118N10NSG | MOS(场效应管) |
INFINEON/英飞凌 |
DFN-85x6 |
11+ |
11000 |
|||
| FU4104 | MOS(场效应管) |
IR |
TO-251 |
05+ |
447 |
|||
| B10B65M1 | MOS(场效应管) |
AOS/万代 |
TO-263 |
15+ |
445 |
|||
| B66916 | MOS(场效应管) |
AOS/万代 |
TO-263 |
10+ |
444 |
|||
| AOTF10N90 | MOS(场效应管) |
AOS/万代 |
TO-220F |
13+ |
444 |
|||
| AOTF360A70L | MOS(场效应管) |
AOS/万代 |
TO-220F |
20+ |
425 |
|||
| STPS3045CGC-TR | 肖特基二极管 |
ST/意法 |
TO-263 |
15+ |
359 |
|||
| AOT474 | MOS(场效应管) |
AOS/万代 |
TO-220 |
15+ |
205 |
|||
| 2SK3563 | MOS(场效应管) |
TOSHIBA/东芝 |
TO-220F |
15+ |
198 |
|||
| STB11NB40T4 | MOS(场效应管) |
ST/意法 |
TO-263 |
04+ |
161 |
|||
| B442 | MOS(场效应管) |
AOS/万代 |
TO-263 |
13+ |
160 |
|||
| AOK30B60D1 | MOS(场效应管) |
AOS/万代 |
TO-247 |
18+ |
149 |
|||
| 5R140P | MOS(场效应管) |
INFINEON/英飞凌 |
TO-262 |
08+ |
144 |
|||
| STK830F | MOS(场效应管) |
AUK |
TO-220F |
04+ |
136 |
|||
| K9A60D | MOS(场效应管) |
TOSHIBA/东芝 |
TO-220F |
15+ |
115 |
|||
| MC3302DR2G | IC |
ONSEMI/安森美 |
SOP-14 |
14+ |
101 |
|||
| 2SK4013 | MOS(场效应管) |
TOSHIBA/东芝 |
TO-220F |
12+ |
90 |
|||
| B412 | MOS(场效应管) |
AOS/万代 |
TO-263 |
15+ |
80 |
|||
| BTA208X-1000C | 双向可控硅 |
NXP/恩智浦 |
TO-220F |
17+ |
77 |
|||
| PTU13005G-252 | MOS(场效应管) |
POWER |
TO-252 |
15+ |
27 |
|||
| FDN537N | MOS(场效应管) |
FAIRCHILD/仙童 |
SOT-23 |
13+ |
46 |
|||
| STP40N65M2 | MOS(场效应管) |
ST/意法 |
TO-220 |
14+ |
256 |