| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| T5B65M1 | MOS(场效应管) |
AO/万代 |
TO-220 |
15+ |
2999 |
|||
| T5B60D | MOS(场效应管) |
AO/万代 |
TO-220 |
16+ |
1000 |
|||
| 4801AS | 双P沟道MOS管 |
AO/万代 |
SOP-8 |
21+ |
21000 |
|||
| 32344C | 双N沟道MOS管 |
AO/万代 |
SO-8 |
20+ |
2999 |
|||
| TF2918 | 中高压MOS管 |
AO/万代 |
TO-220F |
21+ |
51000 |
|||
| STB28N60M2 | N沟道MOS管 |
ST/意法 |
TO-263 |
24+ |
51000 |
|||
| AP2606AGY-HF(YHC2) | MOS(场效应管) |
APEC/富鼎 |
TSOP-6 |
14+ |
51000 |
|||
| 7934 | 双N沟道MOS管 |
AO/万代 |
Power DFN3x3A |
18+ |
5999 |
|||
| 80N3LLH6 | MOS(场效应管) |
ST/意法 |
DFN-85x6 |
10+ |
51000 |
|||
| 7030AL | MOS(场效应管) |
NXP/恩智浦 |
DFN-85x6 |
12+ |
51000 |
|||
| KF6N60D | MOS(场效应管) |
KEC/开益禧 |
TO-252 |
12+ |
51000 |
|||
| KU3600N10WZ | MOS(场效应管) |
KEC/开益禧 |
SOT-223 |
15+ |
51000 |
|||
| 086N10F | MOS(场效应管) |
KEC/开益禧 |
TO-220F |
14+ |
51000 |
|||
| KF9N25D | MOS(场效应管) |
KEC/开益禧 |
TO-252 |
19+ |
51000 |
|||
| TCR5AM11 | 稳压IC |
TOSHIBA/东芝 |
DFN5B |
16+ |
51000 |
|||
| DSR01S30SL | 二极管 |
TOSHIBA/东芝 |
SOD-962/SL2 |
16+ |
51000 |
|||
| HN2S03T | 二极管 |
TOSHIBA/东芝 |
TESQ |
13+ |
51000 |
|||
| C2016-Y | 功率三极管 |
KEC/开益禧 |
TO-220 |
02+ |
51000 |
|||
| TSE152 | 单向可控硅 |
TREASURESTAR/创立达 |
TO-220 |
08+ |
51000 |
|||
| IRG4BC30FD-S | MOS(场效应管) |
IR |
TO-263 |
02+ |
51000 |
|||
| IRG7PH35UD1-EP | MOS(场效应管) |
IR |
TO-247 |
13+ |
51000 |
|||
| IXGQ90N33TCD1 | MOS(场效应管) |
IXYS/艾赛斯 |
TO-3P |
08+ |
51000 |
|||
| 2SK152-4 | 耗尽型MOS管 |
SONY/索尼 |
TO-92 |
07+ |
51000 |
|||
| AON7932 | 双N沟道MOS管 |
AOS/万代 |
PowerDFN3x3A |
13+ |
51000 |
|||
| SSM6N16FE | 双N沟道MOS管 |
TOSHIBA/东芝 |
SOT-563-6/EMT6 |
12+ |
51000 |
|||
| SSM6N36FE | 双N沟道MOS管 |
TOSHIBA/东芝 |
SOT-563-6/EMT6 |
14+ |
51000 |
|||
| SSM6N48FU | 双N沟道MOS管 |
TOSHIBA/东芝 |
SOT-363 |
17+ |
51000 |
|||
| SSM6N7002BFU | 双N沟道MOS管 |
TOSHIBA/东芝 |
SOT-363 |
15+ |
51000 |
|||
| 4810 | 双N沟道MOS管 |
AOS/万代 |
DFN-83x2 |
13+ |
51000 |
|||
| ME3491D-G | P沟道MOS管 |
MATSUKI/松木 |
TSOP-6 |
12+ |
51000 |