| 型号/型号规格 | 分类 | 品牌 | 封装 | 批号 | 数量 | 询价 | ||
|---|---|---|---|---|---|---|---|---|
| 80N3LLH6 | MOS(场效应管) |
ST/意法 |
DFN-85x6 |
10+ |
50000 |
|||
| 77N65M5 | MOS(场效应管) |
ST/意法 |
TO-247 |
11+ |
5000 |
|||
| K100L60W | MOS(场效应管) |
TOSHIBA/东芝 |
TO-3PL |
18+ |
10000 |
|||
| K13A60D | MOS(场效应管) |
TOSHIBA/东芝 |
TO-220F |
22+ |
50000 |
|||
| K31N60W | MOS(场效应管) |
TOSHIBA/东芝 |
TO-247 |
20+ |
21000 |
|||
| K40A10N1 | MOS(场效应管) |
TOSHIBA/东芝 |
TO-220F |
18+ |
21000 |
|||
| K8A55DA | MOS(场效应管) |
TOSHIBA/东芝 |
TO-220F |
12+ |
10000 |
|||
| 60R750P | MOS(场效应管) |
MAGNACHIP/美格纳 |
TO-251 |
15+ |
5999 |
|||
| 60R290P | MOS(场效应管) |
MAGNACHIP/美格纳 |
TO-262 |
15+ |
10000 |
|||
| 60R580PS | MOS(场效应管) |
MAGNACHIP/美格纳 |
TO-220F |
17+ |
10000 |
|||
| MBRD5U150 | MOS(场效应管) |
KEC/开益禧 |
TO-252 |
14+ |
50000 |
|||
| KHB9D0N50F1 | MOS(场效应管) |
KEC/开益禧 |
TO-220F |
10+ |
4000 |
|||
| KHB9D5N20F | MOS(场效应管) |
KEC/开益禧 |
TO-220F |
10+ |
21000 |
|||
| KP11N60DM | MOS(场效应管) |
KEC/开益禧 |
TO-252 |
16+ |
2146 |
|||
| C2682-Y | MOS(场效应管) |
SAM/三星 |
TO-126F |
97+ |
21000 |
|||
| KU086N10P | MOS(场效应管) |
KEC/开益禧 |
TO-220 |
14+ |
10000 |
|||
| KU3600N10WZ | MOS(场效应管) |
KEC/开益禧 |
SOT-223 |
15+ |
50000 |
|||
| IRG4BC30W-S | MOS(场效应管) |
INFINEON/英飞凌 |
TO-263 |
03 |
937 |
|||
| SGB20N60 | MOS(场效应管) |
INFINEON/英飞凌 |
TO-263 |
06+ |
626 |
|||
| AOB412 | MOS(场效应管) |
AO/万代 |
TO-263 |
15+ |
80 |
|||
| IPI65R190C6 | MOS(场效应管) |
INFINEON/英飞凌 |
TO-263 |
13+ |
35 |
|||
| MMF60R190PTH | MOS(场效应管) |
MAGNACHIP/美格纳 |
TO-220F |
13+ |
50 |
|||
| TK16V60W | MOS(场效应管) |
TOSHIBA/东芝 |
DFN-88x8 |
14+ |
74 |
|||
| AOB10B65M1 | MOS(场效应管) |
AO/万代 |
TO-263 |
15+ |
450 |
|||
| AOB10N60L | MOS(场效应管) |
AO/万代 |
TO-263 |
10+ |
423 |
|||
| AOD452 | MOS(场效应管) |
AO/万代 |
TO-252 |
13+ |
267 |
|||
| AOD600A70F | MOS(场效应管) |
AO/万代 |
TO-252 |
18+ |
270 |
|||
| AOT8N50 | MOS(场效应管) |
AO/万代 |
TO-220 |
12+ |
494 |
|||
| H10N60F | MOS(场效应管) |
HJ/华昕 |
TO-220F |
10+ |
459 |
|||
| IPI65R110CFD | MOS(场效应管) |
INFINEON/英飞凌 |
TO-262 |
11+ |
175 |